MBE machine photo

Wafer Growth

Epitaxy is the deposition of single crystal layers on a single crystal substrate. Molecular Beam Epitaxy (MBE) has been described as “spray painting with atoms.” MBE can produce wafers with almost unlimited combinations of stacked epitaxial layers. These “epi-wafers” are the essential starting point for the fabrication of advanced electronic and photonic devices such as high-speed transistors, laser diodes, and photodetectors.

  • Large wafer diameter capable
  • In-situ growth rate calibration
  • High uniformity
  • Variety of layer compositions
  • Wide range of P- and N-type doping
  • Complete computer control of shutters, temperature and substrate position
Sidebar content here.